2003-05-09 page 1 SPP80N08S2L-07 spb80n08s2l-07 opti mos a power-transistor product summary v ds 75 v r ds(on) max. smd version 6.8 m w i d 80 a feature n-channel enhancement mode logic level 175c operating temperature avalanche rated d v /d t rated p- to263 -3-2 p- to220 -3-1 marking 2n08l07 2n08l07 type package ordering code SPP80N08S2L-07 p- to220 -3-1 q67060-s6015 spb80n08s2l-07 p- to263 -3-2 q67060-s6016 maximum ratings , at t j = 25 c, unless otherwise specified parameter symbol value unit continuous drain current 1) t c =25c i d 80 80 a pulsed drain current t c =25c i d puls 320 avalanche energy, single pulse i d =80 a , v dd =25v, r gs =25 w e as 810 mj repetitive avalanche energy, limited by t jmax 2) e ar 30 reverse diode d v /d t i s =80a, v ds =60v, d i /d t =200a/s, t jmax =175c d v /d t 6 kv/s gate source voltage v gs 20 v power dissipation t c =25c p tot 300 w operating and storage temperature t j , t stg -55... +175 c iec climatic category; din iec 68-1 55/175/56
2003-05-09 page 2 SPP80N08S2L-07 spb80n08s2l-07 thermal characteristics parameter symbol values unit min. typ. max. characteristics thermal resistance, junction - case r thjc - 0.3 0.5 k/w thermal resistance, junction - ambient, leaded r thja - - 62 smd version, device on pcb: @ min. footprint @ 6 cm 2 cooling area 3) r thja - - - - 62 40 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. static characteristics drain-source breakdown voltage v gs =0v, i d =1ma v (br)dss 75 - - v gate threshold voltage, v gs = v ds i d =250a v gs(th) 1.2 1.6 2 zero gate voltage drain current v ds =75v, v gs =0v, t j =25c v ds =75v, v gs =0v, t j =125c 2) i dss - - 0.01 1 1 100 a gate-source leakage current v gs =20v, v ds =0v i gss - 1 100 na drain-source on-state resistance v gs =4.5v, i d =67a v gs =4.5v, i d =67a, smd version r ds(on) - - 6.5 6.2 9 8.7 m w drain-source on-state resistance 4) v gs =10v, i d =67a v gs =10v, i d =67a, smd version r ds(on) - - 5.3 5 7.1 6.8 1 current limited by bondwire ; with an r thjc = 0.5k/w the chip is able to carry i d = 135a at 25c, for detailed information see app.-note anps071e available at www.infineon.com/optimos 2 defined by design. not subject to production test. 3 device on 40mm*40mm*1.5mm epoxy pcb fr4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical without blown air. 4 diagrams are related to straight lead versions
2003-05-09 page 3 SPP80N08S2L-07 spb80n08s2l-07 electrical characteristics parameter symbol conditions values unit min. typ. max. dynamic characteristics transconductance g fs v ds 3 2* i d * r ds(on)max , i d =80a 74 148 - s input capacitance c iss v gs =0v, v ds =25v, f =1mhz - 5130 6820 pf output capacitance c oss - 993 1320 reverse transfer capacitance c rss - 415 620 turn-on delay time t d(on) v dd =40v, v gs =10v, i d =80a, r g =1.1 w - 25 38 ns rise time t r - 81 122 turn-off delay time t d(off) - 76 114 fall time t f - 78 117 gate charge characteristics gate to source charge q gs v dd =60v, i d =80a - 18 23 nc gate to drain charge q gd - 66 83 gate charge total q g v dd =60v, i d =80a, v gs =0 to 10v - 186 233 gate plateau voltage v (plateau) v dd =60v, i d =80a - 3.3 - v reverse diode inverse diode continuous forward current i s t c =25c - - 80 a inv. diode direct current, pulsed i sm - - 320 inverse diode forward voltage v sd v gs =0v, i f =80a - 0.9 1.3 v reverse recovery time t rr v r =40v, i f = l s , d i f /d t =100a/s - 81 100 ns reverse recovery charge q rr - 197 250 nc
2003-05-09 page 4 SPP80N08S2L-07 spb80n08s2l-07 1 power dissipation p tot = f ( t c ) parameter: v gs 3 4 v 0 20 40 60 80 100 120 140 160 c 190 t c 0 40 80 120 160 200 240 w 320 SPP80N08S2L-07 p tot 2 drain current i d = f ( t c ) parameter: v gs 3 10 v 0 20 40 60 80 100 120 140 160 c 190 t c 0 10 20 30 40 50 60 70 a 90 SPP80N08S2L-07 i d 4 max. transient thermal impedance z thjc = f ( t p ) parameter : d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -4 10 -3 10 -2 10 -1 10 0 10 1 10 k/w SPP80N08S2L-07 z thjc single pulse 0.01 0.02 0.05 0.10 0.20 d = 0.50 3 safe operating area i d = f ( v ds ) parameter : d = 0.01 , t c = 25 c 10 -1 10 0 10 1 10 2 v v ds 0 10 1 10 2 10 3 10 a SPP80N08S2L-07 i d r ds(on) = v ds / i d 1 ms 100 s 10 s t p = 3.7 s
2003-05-09 page 5 SPP80N08S2L-07 spb80n08s2l-07 5 typ. output characteristic i d = f ( v ds ); t j =25c parameter: t p = 80 s 0 0.5 1 1.5 2 2.5 3 3.5 4 v 5 v ds 0 20 40 60 80 100 120 140 160 a 190 SPP80N08S2L-07 i d v gs [v] a a 2.8 b b 3.0 c c 3.3 d d 3.5 e e 3.8 f f 4.0 g g 4.3 h h 4.5 i p tot = 300 w i 10.0 6 typ. drain-source on resistance r ds(on) = f ( i d ) parameter: v gs 0 20 40 60 80 100 120 140 a 180 i d 0 2 4 6 8 10 12 14 16 18 20 m w 24 SPP80N08S2L-07 r ds(on) v gs [v] = c c 3.3 d d 3.5 e e 3.8 f f 4.0 g g 4.3 h h 4.5 i i 10.0 7 typ. transfer characteristics i d = f ( v gs ); v ds 3 2 x i d x r ds(on)max parameter: t p = 80 s 0 0.5 1 1.5 2 2.5 3 3.5 v ds 4.5 v 0 20 40 60 80 100 120 a 160 i d 8 typ. forward transconductance g fs = f( i d ); t j =25c parameter: g fs 0 20 40 60 80 100 120 a 160 i d 0 20 40 60 80 100 120 140 s 170 g fs
2003-05-09 page 6 SPP80N08S2L-07 spb80n08s2l-07 9 drain-source on-state resistance r ds(on) = f ( t j ) parameter : i d = 67 a, v gs = 10 v -60 -20 20 60 100 140 c 200 t j 0 2 4 6 8 10 12 14 16 18 20 22 24 m w 28 SPP80N08S2L-07 r ds(on) typ 98% 10 typ. gate threshold voltage v gs(th) = f ( t j ) parameter: v gs = v ds -60 -20 20 60 100 c 180 t j 0 0.5 1 1.5 v 2.5 v gs(th) 250a 1.25ma 11 typ. capacitances c = f ( v ds ) parameter: v gs =0v, f =1 mhz 0 5 10 15 20 v 30 v ds 2 10 3 10 4 10 5 10 pf c c iss c oss c rss 12 forward character. of reverse diode i f = f (v sd ) parameter: t j , t p = 80 s 0 0.4 0.8 1.2 1.6 2 2.4 v 3 v sd 0 10 1 10 2 10 3 10 a SPP80N08S2L-07 i f t j = 25 c typ t j = 25 c (98%) t j = 175 c typ t j = 175 c (98%)
2003-05-09 page 7 SPP80N08S2L-07 spb80n08s2l-07 13 typ. avalanche energy e as = f ( t j ) par.: i d = 80 a , v dd = 25 v, r gs = 25 w 25 45 65 85 105 125 145 c 185 t j 0 100 200 300 400 500 600 700 mj 850 e as 14 typ. gate charge v gs = f ( q gate ) parameter: i d = 80 a pulsed 0 40 80 120 160 200 240 nc 300 q gate 0 2 4 6 8 10 12 v 16 SPP80N08S2L-07 v gs 0,8 v ds max ds max v 0,2 15 drain-source breakdown voltage v (br)dss = f ( t j ) parameter: i d =10 ma -60 -20 20 60 100 140 c 200 t j 68 70 72 74 76 78 80 82 84 86 88 v 92 SPP80N08S2L-07 v (br)dss
2003-05-09 page 8 SPP80N08S2L-07 spb80n08s2l-07 published by infineon technologies ag , bereichs kommunikation st.-martin-strasse 53, d-81541 mnchen ? infineon technologies ag 1999 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies reprensatives worldwide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. further information please notice that the part number is b SPP80N08S2L-07 and b spb80n08s2l-07, for simplicity the device is referred to by the term SPP80N08S2L-07 and spb80n08s2l-07 throughout this documentation.
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